型号:

PSMN015-100P,127

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 100V 75A TO220AB
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
PSMN015-100P,127 PDF
标准包装 1,000
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 75A
开态Rds(最大)@ Id, Vgs @ 25° C 15 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 90nC @ 10V
输入电容 (Ciss) @ Vds 4900pF @ 25V
功率 - 最大 300W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 管件
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